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                          BYV29B-500 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 3 April 2012 5 of 11 NXP Semiconductors BYV29B-500 Ultrafast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF =8A; Tj = 150 °C; see Figure 4 - 0.9 1.03 V IF =8A; Tj =25°C; see Figure 4 - 1.05 1.25 V IF =20A; Tj =25°C; see Figure 4 -1.21.4V IR reverse current VR = 500 V; Tj =25°C - 2 50 μA VR = 500 V; Tj = 100 °C - 0.1 0.35 mA Dynamic characteristics Qr recovered charge IF =2A; VR =30V; dIF/dt = 20 A/s; Tj = 25 °C; see Figure 5; see Figure 6 - 4060nC trr reverse recovery time IF =1A; VR =30V; dIF/dt = 100 A/s; Tj = 25 °C; see Figure 7; see Figure 6 - 5060ns IRM peak reverse recovery current IF =10A; VR =30V; dIF/dt = 50 A/s; Tj =100°C; see Figure 8; see Figure 6 -45.5A VFRM forward recovery voltage IF =10A; dIF/dt = 10 A/s; Tj =25°C; see Figure 9 -2.5-V Fig 4. Forward current as a function of forward voltage Fig 5. Recovered charge as a function of rate of change of forward current; maximum values VF (V) 020.5 1 1.5 11010 2 003aaj589 10 20 30 IF (A) 0 (1) (2) (3) 003aaj590 102 10 103 Qr (nC) 1 dIF/dt (A/μs) (1) (2) |